11 September 2006 Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy
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Abstract
VUV-laser-induced oxidation of Si(111)-(1×1):H, Si(100):H, and a-Si:H at 157 nm (F2 laser) in pure O2 and pure H2O atmospheres was studied between 30°C and 250°C. The oxidation process was monitored in real time by spectroscopic ellipsometry (NIR-UV) and FTIR spectroscopy. The ellipsometric measurements could be simulated with a three-layer model, providing detailed information on the variation of the suboxide interface with the nature of the silicon substrate surface. Besides the silicon-dioxide and suboxide layer, a dense, disordered, roughly monolayer thick silicon layer was included, as found previously by molecular dynamics calculations. The deviations from the classical Deal-Grove mechanism and the self-limited growth of the ultrathin dioxide layers (<6 nm) are described by different kinetic models for O2 and H2O. The tailored modification of silicon surfaces by functionalization with organic end groups was studied by silylation of oxidized silicon surfaces with terminating trimethylsilyl (TMS) groups and n-alkylthiol monolayers on gold-coated silicon. The C-H stretching vibrations of the methylene and methyl groups could be identified by FTIR spectroscopy and IR ellipsometry.
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P. Hess, P. Patzner, A. V. Osipov, Z. G. Hu, D. Lingenfelser, P. Prunici, A. Schmohl, "Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy", Proc. SPIE 6325, Physical Chemistry of Interfaces and Nanomaterials V, 63250H (11 September 2006); doi: 10.1117/12.680344; https://doi.org/10.1117/12.680344
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