31 August 2006 Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications
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Proceedings Volume 6327, Nanoengineering: Fabrication, Properties, Optics, and Devices III; 63270L (2006); doi: 10.1117/12.681624
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States
Abstract
We report on a quantum dot (QD) structure grown on a 4'' GaAs substrate by metal organic vapor phase epitaxy (MOVPE), which consists of five stacked InAs/InGaAs/GaAs QD layers embedded in the center of a typical in-plane waveguide. The density of the QDs is about 2.5 x 1010 cm-2 per QD layer. The photoluminescence (PL) peak wavelength at 1322 nm corresponding to the interband transition of the QD ground states was observed at room temperature with a full width at half-maximum of 49 meV. A good uniformity of the QD structure across the 4'' wafer was verified with a variation of the PL peak wavelength of 0.9 % from the wafer center to the edge. Top p-contacts and a bottom n-contact were processed on the QD structure, and electroluminescence (EL) spectra were measured at different temperatures. An EL peak corresponding to the QD ground states emission was obtained at 1325 nm at room temperature.
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Qin Wang, Linda Höglund, Susanne Almqvist, Bertrand Noharet, Carl Asplund, Hedda Malm, Erik Petrini, Jan Y. Andersson, Mattias Hammar, "Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applications", Proc. SPIE 6327, Nanoengineering: Fabrication, Properties, Optics, and Devices III, 63270L (31 August 2006); doi: 10.1117/12.681624; https://doi.org/10.1117/12.681624
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KEYWORDS
Gallium arsenide

Electroluminescence

Semiconducting wafers

Waveguides

Quantum dots

Cladding

Optoelectronic devices

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