2D InP photonic crystal fabrication process development

Bifeng Rong; Emile van der Drift; Rob W. van der Heijden; Huub W. M. Salemink

doi:10.1117/12.680281

31 August 2006 2D InP photonic crystal fabrication process development

Bifeng Rong, Emile van der Drift, Rob W. van der Heijden, Huub W. M. Salemink

Proceedings Volume 6327, Nanoengineering: Fabrication, Properties, Optics, and Devices III; 632715 (2006) https://doi.org/10.1117/12.680281
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N₂+Cl₂ plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectric column radius of 120 nm. Large efforts have been devoted on developing a proper mask. We obtained a perfect, clean and vertical profiled SiN_X mask. The next main effort is InP pattern transfer in Cl₂+N₂ plasma. Etching selectivity, smooth sidewall and etch profile are directly related to plasma process condition, besides the quality of SiNX mask. We have optimized the N₂+Cl₂ plasma condition to obtain high aspect ratio, vertical profile and smooth sidewall InP structures. Cylindrical holes (2 micron depth) and rodlike pillars (2.4 micron height) are uniformly fabricated. An aspect ratio of 18 for 100nm trench lines has been obtained. AFM measurement evidences that etched surfaces are smooth. The root mean square roughness of pillar and hole is 0.7 nm and 0.8 nm, respectively. The optical transmission characterization of ridge waveguides has been carried out. Transmission spectrum of 1 micron wide waveguide has been obtained.

Citation Download Citation

Bifeng Rong, Emile van der Drift, Rob W. van der Heijden, and Huub W. M. Salemink "2D InP photonic crystal fabrication process development", Proc. SPIE 6327, Nanoengineering: Fabrication, Properties, Optics, and Devices III, 632715 (31 August 2006); https://doi.org/10.1117/12.680281

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