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6 September 2006 Plasma wave electronics for generation and detection of THz radiation
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Proceedings Volume 6328, Nanomodeling II; 632801 (2006)
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States
Scaling down the minimum feature size of integrated circuits is pushing the operation of field effect transistors into a ballistic regime, where electron inertia and plasma wave effects start playing a dominant role. In this paper, we review detection and generation of sub-terahertz and terahertz radiation by plasma waves. Both resonant and non-resonant detection has been demonstrated in Si,-based, III-V based, and AlGaN/GaN field effect transistors, and the results are in reasonable agreement with theory. These devices expect to find applications for terahertz detection at high operating frequencies. Weak tunable terahertz emission has been observed at cryogenic temperatures but the plasma wave mechanism still needs to be explored to be proven responsible for this emission. Further improvements are expected by using field effect transistor arrays both for terahertz detection and emission.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael S. Shur "Plasma wave electronics for generation and detection of THz radiation", Proc. SPIE 6328, Nanomodeling II, 632801 (6 September 2006);


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