8 September 2006 Modeling of carbon nanotube-based devices: from nanoFETs to THz emitters
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Proceedings Volume 6328, Nanomodeling II; 632808 (2006) https://doi.org/10.1117/12.680305
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States
Abstract
In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Green's function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes. The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modern micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.
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Aldo Di Carlo, Alessandro Pecchia, Eleonora Petrolati, Claudio Paoloni, "Modeling of carbon nanotube-based devices: from nanoFETs to THz emitters", Proc. SPIE 6328, Nanomodeling II, 632808 (8 September 2006); doi: 10.1117/12.680305; https://doi.org/10.1117/12.680305
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