In modern photolithography, alignment to targets which are burried under layers of highly absorptive coatings at the actinic wavelength, is a severe problem. A novel optical technique has been developed at TRE allowing the use of an arbitrary optical wavelength for target alignment. Significant improvement in target image quality and in system alignment accuracy has been achieved when the alignment wavelength is optimized for minimum process layer absorption and stepper lens aberration. In this paper, the optical approach which corrects for chromatic aberration and astigmatism of the stepper lens will be described. Technical data with a number of commonly used, highly absorptive materials will be presented. Better than 0.25 micron three sigma alignment in realistic absorptive process layers has been achieved with this technique.