Paper
5 December 2006 Electric field and temperature dependence of photoluminescence in fluorescent dye doped tris(8-hydroxyquinoline) aluminum
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Abstract
We measured electric-field-induced fluorescence quenching (EFIFQ) under various temperatures in both undoped and fluorescent dye-doped tris(8-hydroxyquinoline )aluminum (AlQ3) layers of organic light-emitting devices (OLEDs). Results show that for a given temperature doped AlQ3 layers demonstrate smaller EFIFQ than undoped ones. The phenomenon is attributed to the narrower energy band-gap of the guest molecule relative to that of the host material, which makes it less prone to electric-field-induced dissociation of the excited state. Results also show that for a given doping condition increasing the temperature leads to an increase in EFIFQ, indicating that the EFIFQ is a thermally assisted process.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yichun Luo, Hany Aziz, Gu Xu, and Zoran D. Popovic "Electric field and temperature dependence of photoluminescence in fluorescent dye doped tris(8-hydroxyquinoline) aluminum", Proc. SPIE 6333, Organic Light Emitting Materials and Devices X, 63331V (5 December 2006); https://doi.org/10.1117/12.692910
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KEYWORDS
Excitons

Quantum efficiency

Luminescence

Aluminum

Molecules

Organic light emitting diodes

Temperature metrology

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