5 December 2006 Electric field and temperature dependence of photoluminescence in fluorescent dye doped tris(8-hydroxyquinoline) aluminum
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Abstract
We measured electric-field-induced fluorescence quenching (EFIFQ) under various temperatures in both undoped and fluorescent dye-doped tris(8-hydroxyquinoline )aluminum (AlQ3) layers of organic light-emitting devices (OLEDs). Results show that for a given temperature doped AlQ3 layers demonstrate smaller EFIFQ than undoped ones. The phenomenon is attributed to the narrower energy band-gap of the guest molecule relative to that of the host material, which makes it less prone to electric-field-induced dissociation of the excited state. Results also show that for a given doping condition increasing the temperature leads to an increase in EFIFQ, indicating that the EFIFQ is a thermally assisted process.
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Yichun Luo, Hany Aziz, Gu Xu, Zoran D. Popovic, "Electric field and temperature dependence of photoluminescence in fluorescent dye doped tris(8-hydroxyquinoline) aluminum", Proc. SPIE 6333, Organic Light Emitting Materials and Devices X, 63331V (5 December 2006); doi: 10.1117/12.692910; https://doi.org/10.1117/12.692910
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