Translator Disclaimer
Paper
15 November 2006 Exciton annihilation and diffusion in semiconducting polymers
Author Affiliations +
Abstract
We show that time-resolved luminescence measurements at high excitation densities can be used to study exciton annihilation and diffusion, and report the results of such measurements on films of P3HT and MEH-PPV. The results fit to an exciton-exciton annihilation model with a time independent annihilation rate γ, which was measured to be γ = (2.8±0.5)×10-8 cm3s-1 in MEH-PPV and γ = (5.2±1)×10-10 cm3s-1 in P3HT. This implies much faster diffusion in MEHPPV. Assuming a value of 1 nm for the annihilation radius we evaluated the diffusion length for pristine P3HT in one direction to be 3.2 nm. Annealing of P3HT was found to increase the annihilation rate to (1.1±0.2)×10-9 cm3s-1 and the diffusion length to 4.7 nm.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. E. Shaw, A. J. Lewis, A. Ruseckas, and I. D. W. Samuel "Exciton annihilation and diffusion in semiconducting polymers", Proc. SPIE 6334, Organic Photovoltaics VII, 63340G (15 November 2006); https://doi.org/10.1117/12.681573
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top