25 August 2006 Improving photo-switching property of organic photo-FET having photosensitive gate dielectric
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Abstract
We fabricated a novel type photo-FET using poly(N-vinylcarbazole) (PVK) as a photosensitive gate dielectric. For the photo-FET, photo-illumination to the PVK insulator layer makes the field-effect mobility μFET two orders of magnitude higher than dark condition. In particular, under blue-light illumination condition the on-off ratio was also a few ten times higher than dark condition. Furthermore, by introducing blocking layer between semiconductor layer and insulator layer lead. We concluded that the improvement of the transistor properties resulted from effective charge accumulation at the conductive channel by photo illuminations.
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H. Kawai, H. Kawai, T. Kondo, T. Kondo, T. Kawai, T. Kawai, M. Yoshida, M. Yoshida, S. Uemura, S. Uemura, S. Hoshino, S. Hoshino, T. Kodzasa, T. Kodzasa, T. Kamata, T. Kamata, } "Improving photo-switching property of organic photo-FET having photosensitive gate dielectric", Proc. SPIE 6336, Organic Field-Effect Transistors V, 63361E (25 August 2006); doi: 10.1117/12.678929; https://doi.org/10.1117/12.678929
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