12 September 2006 Highly efficient GaN vertical light emitting diode on metal alloy substrate from near UV to green color for solid state lighting application
Author Affiliations +
Abstract
GaN vertical LED on metal alloy substrate (VLEDMS) has been successfully realized for wavelength spectrum from near UV to green color. Owing to the vertical structure and highly heat-conductive metal alloy substrate, VLEDMS exhibits an ultra high brightness and excellent reliability suitable for solid state lighting (SSL) application. A brightness of 80Lm/W using 450 nm chip mixed with yellow phosphor was achieved by optimization of LED structure epitaxy, chip process and packaging. Using 405 nm chip with polychromatic phosphor a 50 Lm/W white light with color rendering index better than 90 was obtained. We also can get very good uniform correlated color temperature from package with VLEDMS chip.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chao-Chen Cheng, Chao-Chen Cheng, Chen-Fu Chu, Chen-Fu Chu, Wen-Huan Liu, Wen-Huan Liu, Jiunn-Yi Chu, Jiunn-Yi Chu, Hao-Chun Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Feng-Hsu Fan, Jui-Kang Yen, Jui-Kang Yen, Chuong Anh Tran, Chuong Anh Tran, Trung Doan, Trung Doan, } "Highly efficient GaN vertical light emitting diode on metal alloy substrate from near UV to green color for solid state lighting application", Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 633703 (12 September 2006); doi: 10.1117/12.687636; https://doi.org/10.1117/12.687636
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT


Back to Top