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12 September 2006 Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films grown pulsed laser deposition
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Abstract
The transport and annealing properties of phosphorus-doped (Zn,Mg)O thin films grown via pulsed laser deposition (PLD) are studied. The electron carrier concentration for (Zn,Mg)O:P films decreases with increasing deposition and Ar annealing temperature. All the films exhibit good crystallinity with c-axis orientation. This result indicates the importance of activation of the P dopant in (Zn,Mg)O:P films. The as-deposited ZnO:P film properties show less dependence on the deposition growth temperatures. The resistivity of the (Zn,Mg)O:P films is significantly higher than the ZnO:P films grown under similar conditions, indicating separation of the conduction band edge relative to the defect donor state. The annealed ZnO:P films are n-type with resistivity dependent on annealing temperature.
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Yuanjie Li, Hyun-Sik Kim, Jean-Marie Erie, Fan Ren, Stephen J. Pearton, and David P. Norton "Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films grown pulsed laser deposition", Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 633708 (12 September 2006); https://doi.org/10.1117/12.694798
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