12 September 2006 Light extraction enhancement of InGaN MQW by reducing total internal reflection through surface plasmon effect
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Abstract
Coupling of a InGaN/GaN multi-quantum well (MQW) and semitransparent metal layer is shown to result in dramatic enhancement of spontaneous emission rate by the surface plasmon effect in the optical spectral range. A five-pairs 18.5nm InGaN/GaN MQW is positioned 175nm, form various thickness (t=5~50nm) silver layer. And periodic patterns (p=0.25~0.8μm) are defined in the top semitransparent metal layer by e-beam lithography, which are grating structures can be incorporated into the metal film to excite surface plasmon between the interference of the metal film and semiconductor. We have experimentally measured photoluminescence intensity and peak position of spontaneous emission of the fabricated structures and compared with the unprocessed samples, whilst still ensuring that most of the emission takes place into the surface plasmon (SP) mode. And the implication of these results for extracting light by reducing total internal reflection (TIR) from light emission diode is discussed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chien Chieh Lee, Chien Chieh Lee, D. L. Wang, D. L. Wang, C. C. Chen, C. C. Chen, Jenq Yang Chang, Jenq Yang Chang, B. J. Pong, B. J. Pong, Gou Chung Chi, Gou Chung Chi, Liang-Wen Wu, Liang-Wen Wu, } "Light extraction enhancement of InGaN MQW by reducing total internal reflection through surface plasmon effect", Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 63370E (12 September 2006); doi: 10.1117/12.678423; https://doi.org/10.1117/12.678423
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