Paper
12 September 2006 Thermal analysis and design of high-power LED packages and systems
Lan Kim, Moo Whan Shin
Author Affiliations +
Abstract
Thermal transient measurements of high power GaN-based LEDs with multi-chip designs are presented and discussed in the paper. Once transient cooling curve was obtained, the structure function theory was applied to determine the thermal resistance of packages. The total thermal resistance from junction to ambient considering optical power is 19.87 K/W, 10.78 K/W, 6.77 K/W for the one-chip, two-chip and four-chip packages, respectively. The contribution of each component to the total thermal resistance of the package can be determined from the cumulative structure function and differential structure function. The total thermal resistance of multi-chip packages is found to decrease with the number of chips due to parallel heat dissipation. However, the effect of the number of chips on thermal resistance of package strongly depends on the ratio of partial thermal resistance of chip and that of slug. Therefore, an important thermal design rule for packaging of high power multi-chip LEDs has been analogized.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lan Kim and Moo Whan Shin "Thermal analysis and design of high-power LED packages and systems", Proc. SPIE 6337, Sixth International Conference on Solid State Lighting, 63370U (12 September 2006); https://doi.org/10.1117/12.687681
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CITATIONS
Cited by 10 scholarly publications.
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KEYWORDS
Light emitting diodes

Resistance

Packaging

Temperature metrology

Thermography

Thermal analysis

Calibration

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