Translator Disclaimer
8 September 2006 Modeling of multi-junction solar cells by Crosslight APSYS
Author Affiliations +
Abstract
In this work, based on the advanced commercial software, the Crosslight APSYS with improved tunnel junction model, two-dimensional (2D) simulation has been performed on the triple-junction (TJ) GaInP/GaAs/Ge solar cell devices. The APSYS simulator solves several interwoven equations including the basic Poisson's equation, and drift-diffusion current equations for electrons and holes. The model of tunnel junction with the equivalent mobility enables an efficient modeling of multi-junction solar cell across the whole solar spectra, where all the spectrum data points are processed by taking into account the effects of multiple layer optical interference and photon generation. Basic physical quantities like band diagrams, optical absorption and generation are demonstrated. The modeled IV characteristics and offset voltage agree well with the published experimental results for TJ GaInP/GaAs/Ge solar cell device. The quantum efficiency spectra have also been computed for the modeled TJ solar cell device. Possible design optimization issues to enhance the quantum efficiency have also been discussed with respect to some applicable features of Crosslight APSYS.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Q. Li, Y. G. Xiao, and Z. M. Simon Li "Modeling of multi-junction solar cells by Crosslight APSYS", Proc. SPIE 6339, High and Low Concentration for Solar Electric Applications, 633909 (8 September 2006); https://doi.org/10.1117/12.681258
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Radiation effects in solar cells
Proceedings of SPIE (May 29 2013)
Quantum wells for high-efficiency photovoltaics
Proceedings of SPIE (March 14 2016)
Modeling of GaInP GaAs Ge and the inverted grown metamorphic...
Proceedings of SPIE (September 09 2008)
Dilute nitride multi quantum well multi junction design a...
Proceedings of SPIE (February 21 2011)

Back to Top