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8 September 2006 Four-sections semiconductor two-mode laser for THz generation
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Proceedings Volume 6343, Photonics North 2006; 63433H (2006) https://doi.org/10.1117/12.708011
Event: Photonics North 2006, 2006, Quebec City, Canada
Abstract
The stable two-mode operation of a 4-sections semiconductor laser emitting at 1.55 μm is experimentally demonstrated and analysed. An interpretation of the two-mode regime involving a saturable absorber is theoretically developed and the characteristic parameters of this saturable absorber deduced. This work exhibits the possibility of terahertz wave generation by photomixing using this device.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Chusseau, Abraham Akwoue Ondo, Jérémi Torres, Philippe Nouvel, Joel Jacquet, and Monique Thual "Four-sections semiconductor two-mode laser for THz generation", Proc. SPIE 6343, Photonics North 2006, 63433H (8 September 2006); doi: 10.1117/12.708011; https://doi.org/10.1117/12.708011
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