10 June 2006 Diode-pumped Q-switched Nd:YVO4 laser with a low-temperature-grown GaAs saturable absorber
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Proceedings Volume 6344, Advanced Laser Technologies 2005; 63440D (2006) https://doi.org/10.1117/12.693399
Event: Advanced Laser Technologies 2005, 2005, Tianjin, China
Abstract
A stable passively Q-switched Nd: YVO4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.
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Yu Gan, Yu Gan, WangHua Xiang, WangHua Xiang, ZhiGang Zhang, ZhiGang Zhang, YongGang Wang, YongGang Wang, QiChang Jiang, QiChang Jiang, Zhuang Zhuo, Zhuang Zhuo, } "Diode-pumped Q-switched Nd:YVO4 laser with a low-temperature-grown GaAs saturable absorber", Proc. SPIE 6344, Advanced Laser Technologies 2005, 63440D (10 June 2006); doi: 10.1117/12.693399; https://doi.org/10.1117/12.693399
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