10 June 2006 Diode-pumped Q-switched Nd:YVO4 laser with a low-temperature-grown GaAs saturable absorber
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Proceedings Volume 6344, Advanced Laser Technologies 2005; 63440D (2006) https://doi.org/10.1117/12.693399
Event: Advanced Laser Technologies 2005, 2005, Tianjin, China
A stable passively Q-switched Nd: YVO4 laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu Gan, Yu Gan, WangHua Xiang, WangHua Xiang, ZhiGang Zhang, ZhiGang Zhang, YongGang Wang, YongGang Wang, QiChang Jiang, QiChang Jiang, Zhuang Zhuo, Zhuang Zhuo, } "Diode-pumped Q-switched Nd:YVO4 laser with a low-temperature-grown GaAs saturable absorber", Proc. SPIE 6344, Advanced Laser Technologies 2005, 63440D (10 June 2006); doi: 10.1117/12.693399; https://doi.org/10.1117/12.693399

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