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10 June 2006 Photoluminescence relaxation kinetics in vapor etched porous silicon
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Proceedings Volume 6344, Advanced Laser Technologies 2005; 63441A (2006)
Event: Advanced Laser Technologies 2005, 2005, Tianjin, China
New porous silicon preparation technique has been suggested and realized with using vapor etching of silicon in iodine and HF contained vapors. It has been shown that vapor etching allows the preparation of luminescent porous layers on heavy doped (n++ and p++ type) silicon. Comparison of Raman and CW excitation PL measurements of vapor etched porous layer with typical anodized luminescent porous silicon indicated that they have in general similar structural and PL properties. Time resolved photoluminescence measurements reveal however that excitation recombination for iodine contained vapor etched samples is two times faster with higher photoluminescence efficiency, which can be interpreted as increasing of radiative recombination rate for luminescence centers in new nanocrystalline silicon.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Karavanskii, W. Gillin, A. Sapelkin, N. N. Melnik, and T. N. Zavaritskaya "Photoluminescence relaxation kinetics in vapor etched porous silicon", Proc. SPIE 6344, Advanced Laser Technologies 2005, 63441A (10 June 2006);


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