10 June 2006 Q-switched output in vertical external cavity surface emitting lasers
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Proceedings Volume 6344, Advanced Laser Technologies 2005; 63441Z (2006) https://doi.org/10.1117/12.693643
Event: Advanced Laser Technologies 2005, 2005, Tianjin, China
We present an optically pumped vertical external cavity surface emitting laser using the semiconductor gain chip composed of quantum wells. With a semiconductor saturable absorber mirror (SESAM), we obtained a Q-switched-like pulse output. The output power reached more than 3 mW at a center wavelength of 1007nm whose repetition frequency was 100 kHz and time bandwidth was 500ns. We discussed the possible reasons that the output power was lower compared with the CW operation. We also investigated the relationship between the intra-cavity intensity and the output pulse width. By designing the gain chip more carefully and increasing the pump power, it should be possible to obtain entirely mode-locking operation.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weiming Yu, Weiming Yu, Yanrong Song, Yanrong Song, Jianghai Hu, Jianghai Hu, Yonggang Wang, Yonggang Wang, Xiaodong Bai, Xiaodong Bai, Zhigang Zhang, Zhigang Zhang, "Q-switched output in vertical external cavity surface emitting lasers", Proc. SPIE 6344, Advanced Laser Technologies 2005, 63441Z (10 June 2006); doi: 10.1117/12.693643; https://doi.org/10.1117/12.693643

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