26 April 2007 High speed imaging of drilling process of thin silicon substrates with double-pulsed femtosecond laser
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Proceedings Volume 6346, XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers; 63462V (2007) https://doi.org/10.1117/12.739123
Event: XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 2006, Gmunden, Austria
Abstract
Femtosecond lasers which have an extremely high peak power are expected to use for micro-processing, such as drilling and cutting. We have analyzed the drilling process by femtosecond laser pulses on surface of various materials including silicon with image-intensified CCD camera with a high speed gate. A femtosecond laser pulses (single and double pulses) were focused on surface of samples using a lens with a focal length of 100 mm. As a result, it was found that the smaller the pulse energy, the faster the formation of the hole. By measuring the rise time in 12 kinds of materials, it was found that the rise time strongly correlates with the thermal conductivity in these materials. Besides, it was also found that double pulsed laser suppressed the heat influence compared to the single pulse laser. These knowledges are thought to be very important and useful for developing microfabrication using a femtosecond laser.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Yokotani, H. Fukumoto, Y. Kanamitsu, S. Nagatomo, Y. Maezono, M. Katto, "High speed imaging of drilling process of thin silicon substrates with double-pulsed femtosecond laser", Proc. SPIE 6346, XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 63462V (26 April 2007); doi: 10.1117/12.739123; https://doi.org/10.1117/12.739123
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