Laser ion source for Ge implantation of silicon surfaces

Fabio Belloni; Vincenzo Nassisi; Lorenzo Torrisi; Jerzy Wolowski; Domenico Doria; Antonella Lorusso; Luciano Velardi

doi:10.1117/12.739326

26 April 2007 Laser ion source for Ge implantation of silicon surfaces

Fabio Belloni, Vincenzo Nassisi, Lorenzo Torrisi, Jerzy Wolowski, Domenico Doria, Antonella Lorusso, Luciano Velardi

Proceedings Volume 6346, XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers; 634634 (2007) https://doi.org/10.1117/12.739326
Event: XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 2006, Gmunden, Austria

Abstract

A novel technique for ion implantation of electronics materials by means of a laser ion source emitting multi-energetic ion streams was investigated. A UV pulsed laser beam, at intensities of the order of 10⁸ W/cm², was employed to produce plasma in a vacuum from a Ge target. The apparatus utilized was very versatile and able to contain an expansion chamber in order to allow the plasma to be diluted before the application of an accelerating voltage. The mean ion energy increased with the laser pulse energy and the ion charge state, and ranged between about 100 eV and 1 keV. To increase the ion energy a post-acceleration up to 50 kV was employed, which resulted in ion energies from about 50 keV to about 150 keV, depending on the charge state. The multi-energetic ion beam, with current density of the order of 10 mA/cm², was employed to irradiate silicon substrates and to obtain surface implantations up to a depth of about 150 nm. During the implantation process the ion beams were generated with a repetition rate of the laser pulse of 1 Hz. The depth profiles of the ion implants were investigated by Rutherford backscattering spectrometry and laser ablation - inductively coupled plasma - mass spectrometry.

Citation Download Citation

Fabio Belloni, Vincenzo Nassisi, Lorenzo Torrisi, Jerzy Wolowski, Domenico Doria, Antonella Lorusso, and Luciano Velardi "Laser ion source for Ge implantation of silicon surfaces", Proc. SPIE 6346, XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 634634 (26 April 2007); https://doi.org/10.1117/12.739326

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KEYWORDS

Ions

Plasma

Germanium

Silicon

Ion lasers

Ion implantation

Pulsed laser operation

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