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20 October 2006 Multi-layer resist system for 45-nm-node and beyond: part I
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Abstract
The mask-making process for 45nm-node and beyond demands higher resolution and CD accuracy. To meet the requirements, the multi-layer resist system is developed as one of the solutions. BIL (Bottom Insulating Layer) can correct the profile of CAR (Chemically Amplified Resist). CAR shows profile degradation by photo-acid loss at the boundary of chrome and resist. The photo-acid loss induces excess footing in positive-tone CAR and under-cutting in negative-tone CAR. BIL reduced the profile degradation to less than half of the conventional resist system. BIL requires no extra mask process steps. Final CD linearity of isolated lines was improved by BIL. It is very beneficial for the patterning of sub-resolution assist features. Moreover, BIL with a hard-mask layer showed superior dry-etching bias performance.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Hashimoto, H. Shiratori, K. Horii, Y. Yokoya, Y. Ohkubo, H. Takamizawa, Y. Fujimura, J. Morimoto, A. Manoshiro, M. Shimizu, T. Yokoyama, T. Enomoto, and M. Nagai "Multi-layer resist system for 45-nm-node and beyond: part I", Proc. SPIE 6349, Photomask Technology 2006, 63490I (20 October 2006); https://doi.org/10.1117/12.693131
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