23 October 2006 Advanced photomask repair technology for 65-nm lithography
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Abstract
We have reported the FIB repair system with low acceleration voltage is applicable to 65nm generation photomasks. Repair technology beyond 65nm generation photomasks requires higher edge placement accuracy and more accurate shape. We developed two new functions, "Two Step Process" and "CAD Data Copy". "Two Step Process" consists of primary process and finishing process. The primary process is conventional process, but the finishing process is precise process to control repaired edge position with sub-pixel order. "Two Step Process" achieved edge placement repeatability less than 3nm in 3sigma. At "CAD Data Copy", defects are recognized with comparison between shape captured from a SIM image and that imported from a CAD system. "CAD Data Copy" reproduced nanometer features with nanometer accuracy. Thus the FIB repair system with low acceleration voltage achieves high performance enough to repair photomasks beyond 65nm generation by using "Two Step Process" and "CAD Data Copy".
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Fumio Aramaki, Fumio Aramaki, Tomokazu Kozakai, Tomokazu Kozakai, Masashi Muramatsu, Masashi Muramatsu, Yasuhiko Sugiyama, Yasuhiko Sugiyama, Yoshihiro Koyama, Yoshihiro Koyama, Osamu Matsuda, Osamu Matsuda, Katsumi Suzuki, Katsumi Suzuki, Mamoru Okabe, Mamoru Okabe, Toshio Doi, Toshio Doi, Ryoji Hagiwara, Ryoji Hagiwara, Tatsuya Adachi, Tatsuya Adachi, Anto Yasaka, Anto Yasaka, Yoshiyuki Tanaka, Yoshiyuki Tanaka, Osamu Suga, Osamu Suga, Naoki Nishida, Naoki Nishida, Youichi Usui, Youichi Usui, } "Advanced photomask repair technology for 65-nm lithography", Proc. SPIE 6349, Photomask Technology 2006, 63491E (23 October 2006); doi: 10.1117/12.691195; https://doi.org/10.1117/12.691195
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