20 October 2006 Present challenges and solutions in sampling and correction for 45 nm
Author Affiliations +
Abstract
Conventional OPC, also known as site-based OPC, has relied on rules-based fragmentation and site placement since its inception. The issues that arose in earlier generations around imprecise site and fragmentation placement, relative to the exact location of proximity effects, has been illustrated in earlier works [1] but generally did not produce catastrophic results. However, when coupled with the large process biases, strong RET, and accuracy requirements for 45 nm and future nodes, this imprecision can produce catastrophic results. This work will report on efforts to use model-directed site and fragmentation placement, as well as inclusion of process window knowledge into the site-based OPC flow to address varied sources of errors and relative results with different approaches. In addition to the conventional site-based OPC, a new breed of tool that avoids sites in favor of fully gridded, or dense, simulation is rapidly maturing. The new approach allows more intelligence to be built into the OPC engine such that fragmentation and error sampling are more automated and thus less error prone. Using the same layout data, we will also present a snapshot of the new tool's results.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ioana Graur, Ioana Graur, Mohamed Al-Imam, Mohamed Al-Imam, Pat LaCour, Pat LaCour, "Present challenges and solutions in sampling and correction for 45 nm", Proc. SPIE 6349, Photomask Technology 2006, 63491Y (20 October 2006); doi: 10.1117/12.691647; https://doi.org/10.1117/12.691647
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT

Automatic SRAF size optimization during OPC
Proceedings of SPIE (March 16 2009)
Adaptive OPC approach based on image simulation
Proceedings of SPIE (September 23 2009)
Dense OPC for 65nm and below
Proceedings of SPIE (November 09 2005)

Back to Top