20 October 2006 Qualitative analysis of haze defects
Author Affiliations +
Abstract
We created haze defects on the PSM mask surface using ArF haze accelerator while the mask was previously cleaned by SPM and SC1 solutions. Then we directly analyzed the defects on the surface using TOF-SMS. The comprehensive analysis of TOF-SIMS signifies that the defects mainly consist of hydrocarbons, Na, K, Cl, F, Mg, Al, etc., which have probably come from previous procedures, fab environments, storage materials, handling steps, or pellicle materials. This fact implies the exclusion of sulfate or ammonium ions from the mask surface should not be enough for the realization of haze-free PSM masks. In addition, complete removal of residual hydrocarbons deposited through previous procedures and perfect protection against environmental contaminants from fab air, storage materials, handling steps, or pellicle materials should be further accomplished.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaehyuck Choi, Jaehyuck Choi, Soowan Koh, Soowan Koh, Sunghun Ji, Sunghun Ji, Byung-Cheol Cha, Byung-Cheol Cha, Seong-Woon Choi, Seong-Woon Choi, Woo-Sung Han, Woo-Sung Han, } "Qualitative analysis of haze defects", Proc. SPIE 6349, Photomask Technology 2006, 63492S (20 October 2006); doi: 10.1117/12.685733; https://doi.org/10.1117/12.685733
PROCEEDINGS
9 PAGES


SHARE
Back to Top