20 October 2006 Non-chemical cleaning technology for sub-90nm design node photomask manufacturing
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Proceedings Volume 6349, Photomask Technology 2006; 63492U (2006); doi: 10.1117/12.686075
Event: SPIE Photomask Technology, 2006, Monterey, California, United States
Abstract
Cleaning chemistry residue in photomask manufacturing is one of root causes to generate HAZE over surface of photomask for 193nm and shorter wavelength exposure tools. In order to reduce the residue, chemical free process is one of targets in photomask industry. In this paper novel clean technology without sulfuric acid and ammonia chemical are shown to manufacture sub-90nm node photomask. Photo and E-beam resist were removed by plasma and ozone water clean instead of sulfuric acid. SPM and APM in final clean sequence before defect inspection were substituted with ozone water and hydrogen water respectively. The clean performance was demonstrated in real production of 193nm phase shift mask. Sulfate and Ammonia residue after final clean were controlled same as blank material level without any clean process.
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Star Hoyeh, Richard Chen, Makoto Kozuma, Joann Kuo, Torey Huang, Frank F. Chen, "Non-chemical cleaning technology for sub-90nm design node photomask manufacturing", Proc. SPIE 6349, Photomask Technology 2006, 63492U (20 October 2006); doi: 10.1117/12.686075; https://doi.org/10.1117/12.686075
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KEYWORDS
Ozone

Scanning probe microscopy

Photomasks

Ions

Hydrogen

Reflectivity

Manufacturing

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