20 October 2006 Multi-layer resist system for 45-nm-node and beyond: Part III
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To control the CD precisely, inorganic "Hard-Mask" which we expect one of the candidates for 45nm-node and beyond technology was evaluated. Hard-Mask which is inserted between resist and Cr layer of a photomask blank enable us to use high anisotropic etch condition. Also it enhances the resist resolution because it can avoid the interaction between resist and Cr. This time, we confirmed the benefit of Hard-Mask which could reduce the etch bias and proximity process error. Especially proximity process error was reduced down to 1/4. And resolution enhancement effect was observed. We also confirmed the blank quality such as defects, film stress, sheet resistance, optical properties and so on, and found that Hard-Mask blank would not be a showstopper for this development.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuuki Abe, Yuuki Abe, Jumpei Morimoto, Jumpei Morimoto, Toshifumi Yokoyama, Toshifumi Yokoyama, Atsushi Kominato, Atsushi Kominato, Yasushi Ohkubo, Yasushi Ohkubo, "Multi-layer resist system for 45-nm-node and beyond: Part III", Proc. SPIE 6349, Photomask Technology 2006, 634935 (20 October 2006); doi: 10.1117/12.692889; https://doi.org/10.1117/12.692889

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