Multi-layer resist system for 45-nm-node and beyond: Part II

Yukihiro Fujimura; Jumpei Morimoto; Asuka Manoshiro; Mochihiro Shimizu; Hideyoshi Takamizawa; Masahiro Hashimoto; Hiroshi Shiratori; Katsuhiko Horii; Yasunori Yokoya; Yasushi Ohkubo; Tomoyuki Enomoto; Takahiro Sakaguchi; Masaki Nagai

doi:10.1117/12.692896

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20 October 2006 Multi-layer resist system for 45-nm-node and beyond: Part II

Yukihiro Fujimura, Jumpei Morimoto, Asuka Manoshiro, Mochihiro Shimizu, Hideyoshi Takamizawa, Masahiro Hashimoto, Hiroshi Shiratori, Katsuhiko Horii, Yasunori Yokoya, Yasushi Ohkubo, Tomoyuki Enomoto, Takahiro Sakaguchi, Masaki Nagai

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Proceedings Volume 6349, Photomask Technology 2006; 634936 (2006) https://doi.org/10.1117/12.692896
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

The CD requirements for the 45nm-node will become tighter so as it will be difficult to achieve with 65nm node technologies. In this paper, a method to improve resolution by using DRECE (Dry-etching Resistance Enhancement bottom-Coating for Eb) will be described. After all, DRECE has five times as high dry-etch resistance than the EB resist, and this enables to accept higher anisotropic dry etching condition. By optimizing dry etching conditions, the CD iso-dense bias dropped to 1/3 and the CD shift was reduced to 1/2. Also, there was no negative effect to CD uniformity. From these results, we propose the use of DRECE for the 45nm-node technology.

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Yukihiro Fujimura, Jumpei Morimoto, Asuka Manoshiro, Mochihiro Shimizu, Hideyoshi Takamizawa, Masahiro Hashimoto, Hiroshi Shiratori, Katsuhiko Horii, Yasunori Yokoya, Yasushi Ohkubo, Tomoyuki Enomoto, Takahiro Sakaguchi, and Masaki Nagai "Multi-layer resist system for 45-nm-node and beyond: Part II", Proc. SPIE 6349, Photomask Technology 2006, 634936 (20 October 2006); https://doi.org/10.1117/12.692896

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