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20 October 2006 Multi-layer resist system for 45-nm-node and beyond: Part II
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Abstract
The CD requirements for the 45nm-node will become tighter so as it will be difficult to achieve with 65nm node technologies. In this paper, a method to improve resolution by using DRECE (Dry-etching Resistance Enhancement bottom-Coating for Eb) will be described. After all, DRECE has five times as high dry-etch resistance than the EB resist, and this enables to accept higher anisotropic dry etching condition. By optimizing dry etching conditions, the CD iso-dense bias dropped to 1/3 and the CD shift was reduced to 1/2. Also, there was no negative effect to CD uniformity. From these results, we propose the use of DRECE for the 45nm-node technology.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yukihiro Fujimura, Jumpei Morimoto, Asuka Manoshiro, Mochihiro Shimizu, Hideyoshi Takamizawa, Masahiro Hashimoto, Hiroshi Shiratori, Katsuhiko Horii, Yasunori Yokoya, Yasushi Ohkubo, Tomoyuki Enomoto, Takahiro Sakaguchi, and Masaki Nagai "Multi-layer resist system for 45-nm-node and beyond: Part II", Proc. SPIE 6349, Photomask Technology 2006, 634936 (20 October 2006); https://doi.org/10.1117/12.692896
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