20 October 2006 Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking
Author Affiliations +
Abstract
Among the potential sources of image placement (IP) error for extreme ultraviolet lithography (EUVL) is the deformation of the mask during electrostatic chucking. This paper focuses on the in-plane and out-of-plane distortion of the EUVL reticle due to the entrapment of particles. Localized finite element (FE) models have been developed to simulate the micro response of the reticle / particle / chuck system. To identify the macro response, global FE models have been generated to simulate the system under typical chucking conditions. Parametric studies were performed to illustrate the effect of particle size on the final IP accuracy.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vasu Ramaswamy, Vasu Ramaswamy, Kevin T. Turner, Kevin T. Turner, Roxann L. Engelstad, Roxann L. Engelstad, Edward G. Lovell, Edward G. Lovell, } "Predicting the influence of trapped particles on EUVL reticle distortion during exposure chucking", Proc. SPIE 6349, Photomask Technology 2006, 634938 (20 October 2006); doi: 10.1117/12.686145; https://doi.org/10.1117/12.686145
PROCEEDINGS
12 PAGES


SHARE
Back to Top