20 October 2006 Evaluation of bi-layer TaSix absorber on buffer for EUV mask
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Abstract
We evaluated TaSix-based bi-layer absorber on ZrSi-based buffer for EUV mask, especially considering the possibility of ZrSi-based film as a combined buffer and capping layer. Since ZrSi-based film has both high dry-etching resistance and EUV transparency, it has potentiality to work as a combined capping and buffer layer. AFM machining repair of bi-layer TaSix absorber on ZrSi-based buffer can be performed to good profile. Printing evaluation showed that over-repair into buffer layer did not affect significantly to wafer CD. FIB (10keV) repair of bi-layer TaSix absorber on ZrSi-based buffer needs improvement for side-wall profile and distinguishable evaluation from implanted Ga+ effect in more detail. Effect of FIB (10keV) scan with ordinary repair process seems to be at least smaller than 10%.
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Koichiro Kanayama, Koichiro Kanayama, Shinpei Tamura, Shinpei Tamura, Yasushi Nishiyama, Yasushi Nishiyama, Masashi Kawashita, Masashi Kawashita, Tadashi Matsuo, Tadashi Matsuo, Akira Tamura, Akira Tamura, Susumu Nagashige, Susumu Nagashige, Kenji Hiruma, Kenji Hiruma, Doohoon Goo, Doohoon Goo, Iwao Nishiyama, Iwao Nishiyama, } "Evaluation of bi-layer TaSix absorber on buffer for EUV mask", Proc. SPIE 6349, Photomask Technology 2006, 63493A (20 October 2006); doi: 10.1117/12.686388; https://doi.org/10.1117/12.686388
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