20 October 2006 Rigorous FEM simulation of EUV masks: influence of shape and material parameters
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We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements. This work results from a collaboration between AMTC (mask fabrication), Physikalisch-Technische Bundesanstalt (scatterometry) and ZIB/JCMwave (numerical simulation).
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Pomplun, Jan Pomplun, Sven Burger, Sven Burger, Frank Schmidt, Frank Schmidt, Lin Zschiedrich, Lin Zschiedrich, Frank Scholze, Frank Scholze, Christian Laubis, Christian Laubis, Uwe Dersch, Uwe Dersch, } "Rigorous FEM simulation of EUV masks: influence of shape and material parameters", Proc. SPIE 6349, Photomask Technology 2006, 63493D (20 October 2006); doi: 10.1117/12.686828; https://doi.org/10.1117/12.686828

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