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20 October 2006 Utilize AIMS simulation to estimate profile side-wall angle
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In the development of leading-edge devices, high-end mask is required and the spec request from mask users becomes more and more tight and complex. Mask users concern not only CD (critical dimension) uniformity, defect condition, registration/overlay, but also haze issue and better pattern profile. There are lots of items which are included in pattern profile, like line-end shortening, edge roughness, corner rounding and side-wall angle, etc. Mask shop's engineers always need to cut blanks and then get cross-section images at CD-SEM. But it wastes lots of time and money. In this paper we try to find the relationship between mask side-wall angle and simulated aerial image by using Carl Zeiss' Aerial Image Measurement System (AIMSTM-fab). For the further study, we compare three types of E-beam writers and two types of etchers to recognize its effect on side-wall angle.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Colbert Lu, C. H. Lin, and C. F. Wang "Utilize AIMS simulation to estimate profile side-wall angle", Proc. SPIE 6349, Photomask Technology 2006, 634943 (20 October 2006);

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