Evaluation of the writing strategy effects with one and two pass exposed by EBM-4000 variable-shaped e-beam lithography tool is a new class of mask making especially for OPC technology. The EBM-4000 writing system features a variable shaped beam, 50 KeV accelerating voltage, a continuous stage, and incorporates some technologies. Obviously, many examples exist of systems which add parallelism to the exposure process by using multiple pass. The standard writing strategy of EBM-4000 writing system is four pass. We evaluated and confirmed the two pass exposed by EBM-4000 writing system for 90 to 130 nm node successfully. The results of the two pass improved throughput and had excellent performances.
In the present paper, the one and two pass exposed by EBM-4000 writing system has been investigated. The objective of the present work is to direct the performances for several design of OPC verification like serifs and jogs. We will provide the actual measurement data and images obtained on CD-SEM for the OPC pattern exposed with one and two pass. In this paper, the characterization data will also present the applicable results such as resolution, position accuracy, global and local CD uniformity, CD linearity, and roughness. We have evaluated and confirmed the one and two pass writing strategies for the EBM-4000 writing system. The writing strategies are especially desirable for unique properties due to the best conditions of the CAR process.