20 October 2006 Self-aligned resist patterning by backside flood exposure in photomask
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Abstract
As a minimum pattern size on photomask decreases, a patterning accuracy is very important. Especially pattern repair needs the perfect positioning accuracy. But the positioning accuracy of equipment stage has its limit and therefore cannot meet a required accuracy. We can form the resist patterns with no positioning error on Cr or MoSiN patterns of photomask. We named this process 'the self-aligned resist patterning' and investigated the various patterning performance. In this process, a photoresist is coated on Cr/MoSiN pattern side and the photomask is exposed to KrF light on a backside and is developed. The principle of this self-aligned resist patterning is the difference between the transmittances of Cr and quartz. This self-aligned resist patterning can form the resist patterns on sub-patterns of Cr or MoSiN which had been formed on photomask. First of all, the alignment accuracy of this process is perfect and the alignment error is zero.
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Taejoong Ha, Taejoong Ha, Byunggu Gyun, Byunggu Gyun, Oscar Han, Oscar Han, } "Self-aligned resist patterning by backside flood exposure in photomask", Proc. SPIE 6349, Photomask Technology 2006, 63494D (20 October 2006); doi: 10.1117/12.686540; https://doi.org/10.1117/12.686540
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