Self-aligned resist patterning by backside flood exposure in photomask

Taejoong Ha; Byunggu Gyun; Oscar Han

doi:10.1117/12.686540

20 October 2006 Self-aligned resist patterning by backside flood exposure in photomask

Taejoong Ha; Byunggu Gyun; Oscar Han

Author Affiliations +

Proceedings Volume 6349, Photomask Technology 2006; 63494D (2006) https://doi.org/10.1117/12.686540
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

As a minimum pattern size on photomask decreases, a patterning accuracy is very important. Especially pattern repair needs the perfect positioning accuracy. But the positioning accuracy of equipment stage has its limit and therefore cannot meet a required accuracy. We can form the resist patterns with no positioning error on Cr or MoSiN patterns of photomask. We named this process 'the self-aligned resist patterning' and investigated the various patterning performance. In this process, a photoresist is coated on Cr/MoSiN pattern side and the photomask is exposed to KrF light on a backside and is developed. The principle of this self-aligned resist patterning is the difference between the transmittances of Cr and quartz. This self-aligned resist patterning can form the resist patterns on sub-patterns of Cr or MoSiN which had been formed on photomask. First of all, the alignment accuracy of this process is perfect and the alignment error is zero.

Citation Download Citation

Taejoong Ha, Taejoong Ha, Byunggu Gyun, Byunggu Gyun, Oscar Han, Oscar Han, } "Self-aligned resist patterning by backside flood exposure in photomask", Proc. SPIE 6349, Photomask Technology 2006, 63494D (20 October 2006); doi: 10.1117/12.686540; https://doi.org/10.1117/12.686540

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