20 October 2006 Rigorous simulation of 3D masks
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Abstract
We perform 3D lithography simulations by using a finite-element solver. To proof applicability to real 3D problems we investigate DUV light propagation through a structure of size 9μm x 4μm x 65nm. On this relatively large computational domain we perform rigorous computations (No Hopkins) taking into account a grid of 11 x 21 source points with two polarization directions each. We obtain well converged results with an accuracy of the diffraction orders of about 1%. The results compare well to experimental aerial imaging results. We further investigate the convergence of 3D solutions towards quasi-exact results obtained with different methods.
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Sven Burger, Sven Burger, Roderick Köhle, Roderick Köhle, Lin Zschiedrich, Lin Zschiedrich, Hoa Nguyen, Hoa Nguyen, Frank Schmidt, Frank Schmidt, Reinhard März, Reinhard März, Christoph Nölscher, Christoph Nölscher, } "Rigorous simulation of 3D masks", Proc. SPIE 6349, Photomask Technology 2006, 63494Z (20 October 2006); doi: 10.1117/12.687816; https://doi.org/10.1117/12.687816
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