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6 July 2006 20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots
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Proceedings Volume 6350, Workshop on Optical Components for Broadband Communication; 635003 (2006) https://doi.org/10.1117/12.693006
Event: Workshop on Optical Components for Broadband Communication, 2006, Stockholm, Sweden
Abstract
980 nm vertical-cavity surface-emitting laser based on sub-monolayer growth of quantum dots show at 25 and 85°C for 20 Gb/s without current adjustment clearly open eyes and error free operation with bit error rates better than 10-12. For these multimode lasers the small signal modulation bandwidth decreases only from 15 GHz at 25°C to 13 GHz at 85°C. Single mode devices demonstrate at 20°C a small signal modulation bandwidth of 16.6 GHz with 0.8 mW optical output power and a record high modulation current efficiency factor of 19 GHz/mA1/2.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Hopfer, A, Mutig, G. Fiol, M. Kuntz, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, A. R. Kovsh, C. Bornholdt, V. Shchukin, N. N. Ledentsov, V. Gaysler, N. D. Zakharov, P. Werner, and D. Bimberg "20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots", Proc. SPIE 6350, Workshop on Optical Components for Broadband Communication, 635003 (6 July 2006); https://doi.org/10.1117/12.693006
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