GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 &mu;m range

L. Grenouillet; P. Duvaut; N. Olivier; P. Gilet; P. Grosse; S. Poncet; P. Philippe; E. Pougeoise; L. Fulbert; A. Chelnokov

doi:10.1117/12.692829

7 July 2006 GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

L. Grenouillet, P. Duvaut, N. Olivier, P. Gilet, P. Grosse, S. Poncet, P. Philippe, E. Pougeoise, L. Fulbert, A. Chelnokov

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Proceedings Volume 6350, Workshop on Optical Components for Broadband Communication; 63500G (2006) https://doi.org/10.1117/12.692829
Event: Workshop on Optical Components for Broadband Communication, 2006, Stockholm, Sweden

Abstract

In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs) emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being operated at high frequencies, their low threshold current and their low beam divergence. Such devices emitting in this wavelength range have been demonstrated using different materials such as strained GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8, 9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase epitaxy (MOVPE). In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could therefore benefit to future new sources for photonics on silicon applications. In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.

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L. Grenouillet, P. Duvaut, N. Olivier, P. Gilet, P. Grosse, S. Poncet, P. Philippe, E. Pougeoise, L. Fulbert, and A. Chelnokov "GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range", Proc. SPIE 6350, Workshop on Optical Components for Broadband Communication, 63500G (7 July 2006); https://doi.org/10.1117/12.692829

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KEYWORDS

Vertical cavity surface emitting lasers

Quantum wells

Doping

Continuous wave operation

Oxides

Nitrogen

Mirrors

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