5 October 2006 Sidelobe reduction in Si photonic wire AWG
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 635205 (2006) https://doi.org/10.1117/12.690948
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
We designed and fabricated an arrayed waveguide grating demultiplexer of 70 × 75 μm2 size, which consists of Si slab and wire waveguides on silicon-on-insulator substrate. By optimizing the connection between components and the layout of arrayed waveguides, the internal light scattering and the phase error were suppressed. As a result, the clear demultiplexing characteristics were observed with a channel spacing of 8 nm and a sidelobe level of -22 dB in the wavelength range around 1.55 μm.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kosuke Sasaki, Kosuke Sasaki, Fumiaki Ohno, Fumiaki Ohno, Ayumu Motegi, Ayumu Motegi, Toshihiko Baba, Toshihiko Baba, "Sidelobe reduction in Si photonic wire AWG", Proc. SPIE 6352, Optoelectronic Materials and Devices, 635205 (5 October 2006); doi: 10.1117/12.690948; https://doi.org/10.1117/12.690948
PROCEEDINGS
9 PAGES


SHARE
Back to Top