5 October 2006 1310-nm InGaAlAs short-cavity lasers for 10-Gbit/s low-power-consumption transceivers
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63520B (2006) https://doi.org/10.1117/12.691031
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
An InGaAlAs short-cavity DBR laser enabling 1.3-μm, uncooled, 10-Gbit/s operation at lower drive currents is demonstrated. This laser consists of a short InGaAlAs-MQW active region butt-jointed to an InGaAsP-DBR region. This structure provides moderate chip power, low threshold current, and a large relaxation oscillation frequency simultaneously, because it has an optimum cavity length in the range between 10 and 100 μm, at which both VCSELs and conventional edge-emitters cannot be formed because of their difficulty of manufacture. The fabricated 75-μm short-cavity laser demonstrated 100°C, 10-Gb/s operation at a record low drive current of 14 mAp-p. Furthermore, it achieved side-mode suppression ratio of more than 37 dB at a high yield of 95%, because of the naturally high single-mode stability of its short-cavity DBR structure.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazunori Shinoda, Kazunori Shinoda, Takeshi Kitatani, Takeshi Kitatani, Masahiro Aoki, Masahiro Aoki, Masaru Mukaikubo, Masaru Mukaikubo, Kenji Uchida, Kenji Uchida, Kazuhisa Uomi, Kazuhisa Uomi, } "1310-nm InGaAlAs short-cavity lasers for 10-Gbit/s low-power-consumption transceivers", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520B (5 October 2006); doi: 10.1117/12.691031; https://doi.org/10.1117/12.691031
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