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5 October 2006 Highly integrated 10Gb/s optical sub-assembly and its circuit modeling
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63520D (2006) https://doi.org/10.1117/12.687391
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
A highly integrated 10 Gb/s transmitter optical sub-assembly was fabricated and characterized for XFP transceiver. As a light source, uncooled 1.3 μm high-speed distributed feedback laser diode (DFB-LD) was fabricated and assembled on AlN sub-mount with a monitoring PD, a matching-resistor, and a bias-Tee with spiral-inductor. A glass sealed metallic low-loss TO-stem with in-line leads was newly presented. We developed a small-signal equivalent circuit model based on measured S-parameters in order to verify RF characteristics of LD and passive components. The eye-diagram of 10 Gb/s NRZ patterns with a PRBS 231 -1 was opened clearly without mask violation. At 85°C, -3-dB bandwidth was measured as high as 11 GHz and 75-km transmission was successfully achieved with very low penalty.
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Jongin Shim and Dongchurl Kim "Highly integrated 10Gb/s optical sub-assembly and its circuit modeling", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520D (5 October 2006); https://doi.org/10.1117/12.687391
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