5 October 2006 High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 63520L (2006); doi: 10.1117/12.691841
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
We presented the high temperature operation of 1200-nm band highly strained GaInAs/GaAs ridge-waveguide lasers. Active layer consists in three quantum wells with highly strained GaInAs. The In composition is 32%. The maximum operating temperature reaches at over 200°C and temperature characteristic T0 is 222K at 30-80°C with continuous wave operations, showing excellent temperature characteristics of highly strained QWs. We obtained a relaxation oscillation frequency of 2 GHz at 170°C.
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Shigeru Kanazawa, Kazutaka Takeda, Tomoyuki Miyamoto, Fumio Koyama, "High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520L (5 October 2006); doi: 10.1117/12.691841; https://doi.org/10.1117/12.691841

Quantum wells

Temperature metrology

Continuous wave operation

Pulsed laser operation

Laser applications

Near field

Semiconductor lasers


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