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5 October 2006High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser
We presented the high temperature operation of 1200-nm band highly strained GaInAs/GaAs ridge-waveguide lasers. Active layer consists in three quantum wells with highly strained GaInAs. The In composition is 32%. The maximum operating temperature reaches at over 200°C and temperature characteristic T0 is 222K at 30-80°C with continuous wave operations, showing excellent temperature characteristics of highly strained QWs. We obtained a relaxation
oscillation frequency of 2 GHz at 170°C.