High-temperature operation of a 1.2-µm single-transverse-mode highly strained GaInAs/GaAs QW laser

Shigeru Kanazawa; Kazutaka Takeda; Tomoyuki Miyamoto; Fumio Koyama

doi:10.1117/12.691841

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5 October 2006 High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser

Shigeru Kanazawa; Kazutaka Takeda; Tomoyuki Miyamoto; Fumio Koyama

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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63520L (2006) https://doi.org/10.1117/12.691841
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

We presented the high temperature operation of 1200-nm band highly strained GaInAs/GaAs ridge-waveguide lasers. Active layer consists in three quantum wells with highly strained GaInAs. The In composition is 32%. The maximum operating temperature reaches at over 200°C and temperature characteristic T₀ is 222K at 30-80°C with continuous wave operations, showing excellent temperature characteristics of highly strained QWs. We obtained a relaxation oscillation frequency of 2 GHz at 170°C.

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Shigeru Kanazawa, Kazutaka Takeda, Tomoyuki Miyamoto, and Fumio Koyama "High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520L (5 October 2006); https://doi.org/10.1117/12.691841

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