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6 October 2006 Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 635217 (2006) https://doi.org/10.1117/12.691710
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. H. Kwakernaak, W. K. Chan, B. Kharas, N. Maley, H. Mohseni, L. Yang, D. Capewell, V. Frantz, T. Mood, G. A. Pajer, D. A. Ackerman, J. H. Abeles, A. M. Braun, J. G. Kim, D. S. Bang, and D. H. Lee "Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections", Proc. SPIE 6352, Optoelectronic Materials and Devices, 635217 (6 October 2006); https://doi.org/10.1117/12.691710
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