Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors

Jinlin Chen; Zhiping Zhou

doi:10.1117/12.688702

6 October 2006 Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors

Jinlin Chen, Zhiping Zhou

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521C (2006) https://doi.org/10.1117/12.688702
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

A general structure of Ge-on-Si Resonant cavity enhanced (RCE) PIN photodetectors with modified top and bottom mirrors operation at 1.55μm is presented. Resonating mirrors with higher reflectance are obtained. Different cases on the relationship of quantum efficiency and wavelength are discussed in detail. The number of Si-SiO₂ layers in top and bottom mirrors for the highest quantum efficiency is analyzed. The frequency response considering both the transit time and the capacitance with different device areas is also simulated. These results offer a complete guideline for designing and fabricating a high speed, high quantum efficiency Ge-on-Si RCE PIN device.

Citation Download Citation

Jinlin Chen and Zhiping Zhou "Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521C (6 October 2006); https://doi.org/10.1117/12.688702

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