6 October 2006 Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521C (2006) https://doi.org/10.1117/12.688702
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
A general structure of Ge-on-Si Resonant cavity enhanced (RCE) PIN photodetectors with modified top and bottom mirrors operation at 1.55μm is presented. Resonating mirrors with higher reflectance are obtained. Different cases on the relationship of quantum efficiency and wavelength are discussed in detail. The number of Si-SiO2 layers in top and bottom mirrors for the highest quantum efficiency is analyzed. The frequency response considering both the transit time and the capacitance with different device areas is also simulated. These results offer a complete guideline for designing and fabricating a high speed, high quantum efficiency Ge-on-Si RCE PIN device.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinlin Chen, Jinlin Chen, Zhiping Zhou, Zhiping Zhou, } "Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521C (6 October 2006); doi: 10.1117/12.688702; https://doi.org/10.1117/12.688702

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