6 October 2006 A novel high performance planar InGaAs/InAlAs avalanche photodiode
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521D (2006) https://doi.org/10.1117/12.688353
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
We discuss a new simple InGaAs/InAlAs avalanche photodiode (APD) with a planar buried multiplication region. Some of the advantages compared to standard APDs are: 1. The thickness of the avalanche and the charge control regions are accurately controlled by molecular beam epitaxy (MBE) growth in contrast to the standard diffusion process; 2. InAlAs is the multiplication material (avalanching faster electrons) instead of InP (avalanching slower holes); 3. InAlAs avalanche gain has a lower noise figure than that for InP; 4. A guard ring is not required; 5. Fabrication is as simple as that for a p-i-n detector; 6. The APD has high wafer uniformity, and high reproducibility; 7. The InAlAs breakdown voltage is lower than InP, and its variation with temperature is three times lower than that for InP; 8. Excellent aging and reliability including Telcordia GR-468 qualification for die and modules; 9. High gain-bandwidth product as high as 150GHz; and 10.High long range (LR-2) bit error rate (BER) 10-12 receiver sensitivity of -29.0dBm at 10Gb/s, -28.1dBm at 10.7Gb/s and -27.1dBm at 12.5Gbs.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. F. Levine, B. F. Levine, R. N. Sacks, R. N. Sacks, J. Ko, J. Ko, M. Jazwiecki, M. Jazwiecki, J. A. Valdmanis, J. A. Valdmanis, D. Gunther, D. Gunther, J. H. Meier, J. H. Meier, } "A novel high performance planar InGaAs/InAlAs avalanche photodiode", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521D (6 October 2006); doi: 10.1117/12.688353; https://doi.org/10.1117/12.688353
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