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6 October 2006 Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521J (2006) https://doi.org/10.1117/12.691215
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
We investigated the dependency of waveguide structures on ripples of far-field patterns in 405nm GaN-based laser diodes theoretically and experimentally. As the n-type cladding layer thickness decreases, the passive waveguide modes strongly interact with an active layer mode. This suggests that the thicknesses of n-AlGaN/GaN superlattice clad and n-GaN waveguide layers have significant influences on FFP ripples. We successfully obtained very smooth far-field patterns perpendicular to the junction plane by optimizing both n-AlGaN/GaN clad layer thickness and n-GaN waveguide layer thickness.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sungmin Hwang, Jongin Shim, Hanyoul Ryu, Kyung-ho Ha, Junghye Chae, and Okhyun Nam "Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521J (6 October 2006); https://doi.org/10.1117/12.691215
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