6 October 2006 Enhanced terahertz emission from InAs quantum dots on GaAs
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521Z (2006); doi: 10.1117/12.691628
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
Optically pumped terahertz emission has been observed in a wide range of semiconductors. We show that InAs quantum dots on GaAs can be used to significantly enhance terahertz emission compared with a bare GaAs surface.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongkyu Park, Jeonghoi Kim, Euna Jung, Wonjun Choi, Jungil Lee, Haewook Han, "Enhanced terahertz emission from InAs quantum dots on GaAs", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521Z (6 October 2006); doi: 10.1117/12.691628; https://doi.org/10.1117/12.691628
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KEYWORDS
Terahertz radiation

Gallium arsenide

Indium arsenide

Semiconductors

Quantum dots

Ultrafast lasers

Beam splitters

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