Semiconductor modeling and characterization of ternary materials have been performed using simulation. Ternary
semiconductors such as AlxGa1-xAs, GaxIn1-xAs and AlxIn1-xAs have been studied using Monte Carlo Simulation.
Standard parameters like device dimension, donor concentration, temperature, electric field, etc have been considered.
Drift velocity with respect to applied electric field in the range of 10kv/cm - 60kv/cm has been observed for three
ternary semiconductors. It has been found that up to 30kv/cm, velocities for different compositions show major
variations. But after 30kv/cm, they show less variation from each other. It is observed that, with an increase in applied
field, the G valley electron population decreases while L and X valley population increases. The scattering methods that
have been considered during the study of transport properties are Polar Optical Phonon Scattering (absorption and
emission), Intervalley scattering, Ionized Impurity Scattering.