6 October 2006 Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63522A (2006) https://doi.org/10.1117/12.691802
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
Semiconductor modeling and characterization of ternary materials have been performed using simulation. Ternary semiconductors such as AlxGa1-xAs, GaxIn1-xAs and AlxIn1-xAs have been studied using Monte Carlo Simulation. Standard parameters like device dimension, donor concentration, temperature, electric field, etc have been considered. Drift velocity with respect to applied electric field in the range of 10kv/cm - 60kv/cm has been observed for three ternary semiconductors. It has been found that up to 30kv/cm, velocities for different compositions show major variations. But after 30kv/cm, they show less variation from each other. It is observed that, with an increase in applied field, the G valley electron population decreases while L and X valley population increases. The scattering methods that have been considered during the study of transport properties are Polar Optical Phonon Scattering (absorption and emission), Intervalley scattering, Ionized Impurity Scattering.
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Hasan Sarwar, Shahida Rafique, "Study of scattering in 1D nanostructured semiconductor devices using Monte Carlo simulation", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63522A (6 October 2006); doi: 10.1117/12.691802; https://doi.org/10.1117/12.691802
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