6 October 2006 Lasing characteristics of 1.3-μm atomic layer epitaxy quamtum dot laser diode
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63522G (2006) https://doi.org/10.1117/12.691596
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm2 under a pulsed operation and 247 A/cm2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kwang Woong Kim, Kwang Woong Kim, Nam Ki Cho, Nam Ki Cho, Jin Dong Song, Jin Dong Song, Won Jun Choi, Won Jun Choi, Jung Il Lee, Jung Il Lee, Jung Ho Park, Jung Ho Park, "Lasing characteristics of 1.3-μm atomic layer epitaxy quamtum dot laser diode", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63522G (6 October 2006); doi: 10.1117/12.691596; https://doi.org/10.1117/12.691596


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